This inventor holds 1 USPTO granted patent. Top assignee: STMicroelectronics. Active years: 2011.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2011
Title: Pierre Ranson: Innovator in Silicon Etching Technology
Introduction
Pierre Ranson is a notable inventor based in Orléans, France. He has made significant contributions to the field of semiconductor technology, particularly in the area of silicon etching. His innovative methods have paved the way for advancements in various electronic applications.
Latest Patents
Pierre Ranson holds a patent for a "Deep anisotropic silicon etch method." This method involves anisotropic plasma etching of a silicon wafer, maintained at temperatures ranging from -40°C to -120°C. The process consists of alternated and repeated steps that enhance the precision and efficiency of silicon etching.
Career Highlights
Pierre Ranson is currently employed at STMicroelectronics, a leading global semiconductor company. His work at STMicroelectronics has allowed him to apply his expertise in silicon etching, contributing to the development of advanced electronic components.
Collaborations
Throughout his career, Pierre has collaborated with talented professionals, including Philippe Lefaucheux and Rémi Dussart. These collaborations have fostered innovation and have been instrumental in the success of various projects.
Conclusion
Pierre Ranson's contributions to silicon etching technology exemplify his dedication to innovation in the semiconductor industry. His patent and work at STMicroelectronics highlight his role as a key figure in advancing electronic technologies.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile