Hefei, China

Thomas Jongwan Kwon

This inventor holds 3 USPTO granted patents and 2 EPO patents. Top assignee: Changxin Memory Technologies, Inc.. Active years: 2024-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Thomas Jongwan Kwon. Retrieved from https://idiyas.com/inventor/thomas-jongwan-kwon-n2g0u7sn

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

 

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2024-2025

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3 patents (USPTO):Explore Patents

Title: Thomas Jongwan Kwon: Innovator in Memory Technology

Introduction

Thomas Jongwan Kwon is a prominent inventor based in Hefei, China. He has made significant contributions to the field of memory technology, holding a total of 3 patents. His work focuses on innovative methods for forming memory devices, which are crucial for advancing modern computing.

Latest Patents

Kwon's latest patents include a memory forming method and a memory device. One of the key aspects of his patented method involves providing a substrate that includes word line structures and active regions. The method outlines the process of etching parts of the bit line contact layers to create layers of varying heights. This innovation aims to enhance the performance and efficiency of memory devices.

Career Highlights

Thomas Jongwan Kwon is currently employed at Changxin Memory Technologies, Inc. His role at the company allows him to apply his expertise in memory technology and contribute to the development of advanced memory solutions. His work is instrumental in pushing the boundaries of what is possible in memory device technology.

Collaborations

Kwon collaborates with notable colleagues, including Lingguo Zhang and Lintao Zhang. These partnerships foster a creative environment that encourages innovation and the sharing of ideas in the field of memory technology.

Conclusion

Thomas Jongwan Kwon is a key figure in the advancement of memory technology, with a focus on innovative methods that improve device performance. His contributions through patents and collaborations continue to shape the future of memory devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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