Thomas G McKay

Title: The Innovations of Thomas G McKay

Introduction

Thomas G McKay is a notable inventor based in Felton, CA (US). He has made significant contributions to the field of electronics, particularly in the development of RF MOSFET devices. With a total of 7 patents to his name, McKay's work has had a considerable impact on the industry.

Latest Patents

One of McKay's latest patents is the Split Source RF MOSFET device. This invention features an RF MOS transistor that boasts improved AC output conductance and AC output capacitance. The design includes parallel interdigitated source and drain regions that are separated by channel regions and overlying gates. Additionally, grounded tap regions that contact an underlying well are placed contiguous to the source regions. This innovative design reduces distributed backgate resistance, lowers backgate channel modulation, and ultimately decreases output conductance.

Career Highlights

Throughout his career, Thomas G McKay has worked with several prominent companies, including Zeevo, Inc. and Samsung Electronics Co., Ltd. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking technologies in the electronics sector.

Collaborations

Some of McKay's notable coworkers include Christopher Donald Nilson and Stephen Allott. Their collaborative efforts have likely played a role in the successful development of various projects and patents.

Conclusion

Thomas G McKay's contributions to the field of electronics, particularly through his innovative RF MOSFET devices, highlight his importance as an inventor. His work continues to influence advancements in technology and showcases the impact of dedicated inventors in the industry.