The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2003

Filed:

Apr. 02, 2001
Applicant:
Inventors:

Christopher D. Nilson, San Jose, CA (US);

Thomas G. McKay, Felton, CA (US);

Assignee:

Zeevo, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/18 ; H03F 3/26 ; H03F 3/16 ;
U.S. Cl.
CPC ...
H03F 3/18 ; H03F 3/26 ; H03F 3/16 ;
Abstract

Disclosed is a CMOS transistor amplifier for small RF signals which operates in a Class AB mode. The serially connected P channel and N channel transistors of the CMOS transistor pair have DC bias voltages applied to the control gates, and the small input signal is capacitively coupled to the gates of the CMOS transistor pair. In a preferred embodiment, the DC voltage bias for the P channel transistor is derived from a second P channel transistor which is approximately identical to the first P channel transistor in structure with the second P channel transistor serially connected with the current source and the voltage at the gate/drain of the transistor resistively coupled to the gate of the first P channel transistor. Similarly, the second bias circuit comprises a second N channel transistor which is approximately identical in structure to the first N channel transistor with the second N channel transistor serially connected with a current source and the bias voltage taken at the gate/drain of the second N channel transistor. The bias voltage is then applied through resistive means to the gate of the first N channel transistor.


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