Thomas E Harrington, III

Title: Thomas E Harrington, III: Innovator in Power Semiconductor Technology

Introduction

Thomas E Harrington, III is a notable inventor based in Durham, NC (US). He has made significant contributions to the field of power semiconductor devices, holding 2 patents that showcase his innovative approach to technology.

Latest Patents

Harrington's latest patents include a process for separately forming n-type and p-type ohmic contacts in power semiconductor devices. This invention involves a semiconductor layer structure that comprises a wide bandgap semiconductor material. The structure includes a drift region of a first conductivity type, a source region of the first conductivity type, and a well contact region of a second conductivity type adjacent to the source region. The design features a first ohmic contact made from a first conductive material on the source region and a second ohmic contact made from a different conductive material on the well contact region. Additionally, a gate structure is formed on the drift region, which includes a gate contact made from a third conductive material. Related devices and fabrication methods are also discussed in his patents. Another patent focuses on power semiconductor devices that include multiple gate bond pads, which are designed to enhance the functionality of silicon carbide-based semiconductor layer structures.

Career Highlights

Harrington is currently associated with Wolfspeed, Inc., a company known for its advancements in semiconductor technology. His work has been pivotal in developing innovative solutions that improve the efficiency and performance of power semiconductor devices.

Collaborations

Harrington collaborates with Daniel Jenner Lichtenwalner, contributing to the advancement of semiconductor technologies through their combined expertise.

Conclusion

Thomas E Harrington, III is a distinguished inventor whose work in power semiconductor technology continues to influence the industry. His patents reflect a commitment to innovation and excellence in semiconductor design.