The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2026
Filed:
Oct. 20, 2021
Wolfspeed, Inc., Durham, NC (US);
Thomas E. Harrington, III, Durham, NC (US);
Shadi Sabri, Apex, NC (US);
Wolfspeed, Inc., Durham, NC (US);
Abstract
A power semiconductor device includes a semiconductor layer structure comprising a wide bandgap semiconductor material. The semiconductor layer structure includes a drift region of a first conductivity type, a source region of the first conductivity type, and a well contact region of a second conductivity type adjacent the source region. A first ohmic contact comprising a first conductive material is formed on the source region. A second ohmic contact comprising a second conductive material, which is different than the first conductive material, is formed on the well contact region. A gate structure is formed on the drift region and includes a gate contact comprising a third conductive material, which is different than the first and second conductive material. Related devices and fabrication methods are also discussed.