Thomas D Linton, Jr

Title: Innovations by Thomas D Linton, Jr.

Introduction

Thomas D Linton, Jr. is a prominent inventor based in San Jose, CA. He has made significant contributions to the field of semiconductor technology, particularly in the development of tunneling field effect transistors (TFETs). With a total of 5 patents to his name, Linton's work has the potential to influence future CMOS architectures.

Latest Patents

Linton's latest patents focus on tunneling field effect transistors (TFETs) for CMOS architectures. These patents describe innovative approaches to fabricating N-type and P-type TFETs. For instance, a tunneling field effect transistor includes a homojunction active region disposed above a substrate. This active region comprises a relaxed Ge or GeSn body with an undoped channel region. Additionally, it features doped source and drain regions on either side of the channel region. The TFET also includes a gate stack positioned on the channel region, which consists of a gate dielectric portion and a gate electrode portion.

Career Highlights

Linton has established a successful career at Intel Corporation, where he has been instrumental in advancing semiconductor technologies. His expertise in TFETs has positioned him as a key player in the industry, contributing to the development of more efficient electronic devices.

Collaborations

Throughout his career, Linton has collaborated with notable colleagues, including Rafael Rios and Roza Kotlyar. These partnerships have fostered innovation and have been essential in the progression of their shared projects.

Conclusion

Thomas D Linton, Jr. is a distinguished inventor whose work in tunneling field effect transistors is paving the way for advancements in semiconductor technology. His contributions at Intel Corporation and his collaborations with other experts highlight his significant impact on the field.