The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2005
Filed:
Jun. 30, 2003
Applicants:
Rafael Rios, Portland, OR (US);
Brian S. Doyle, Portland, OR (US);
Thomas D. Linton, Jr., San Jose, CA (US);
Jack Kavalieros, Portland, OR (US);
Inventors:
Rafael Rios, Portland, OR (US);
Brian S. Doyle, Portland, OR (US);
Thomas D. Linton, Jr., San Jose, CA (US);
Jack Kavalieros, Portland, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L021/3205 ;
U.S. Cl.
CPC ...
Abstract
A n-gate transistor, and method of forming such, including source/drain regions connected by a channel region and a gate electrode coupled to the channel region. The channel region has many angled edges protruding into the gate electrode. The many angled edges are to act as electrically conducting channel conduits between source/drain regions.