Hinode, Japan

Tetsuya Hayashida


Average Co-Inventor Count = 1.1

ph-index = 3

Forward Citations = 27(Granted Patents)


Company Filing History:


Years Active: 2004-2005

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4 patents (USPTO):Explore Patents

Title: Tetsuya Hayashida: Innovator in Semiconductor Technology

Introduction

Tetsuya Hayashida is a notable inventor based in Hinode, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of four patents. His work focuses on improving semiconductor devices and their manufacturing methods.

Latest Patents

Hayashida's latest patents include a semiconductor device and its manufacturing method. This invention discloses a semiconductor device featuring area array bump electrodes that are suitable for flip chip packaging. The device includes a semiconductor chip with wire bonding electrodes arranged along its peripheral edges. Gold wire bump electrodes are formed over these wire bonding electrodes, and a wiring tape substrate is superimposed on the semiconductor chip and bonded with an adhesive. The design allows for the convex tips of the gold wire bump electrodes to pierce through the adhesive, establishing electrical connections. Another significant patent involves a method of making a semiconductor with multi-layered electrodes, which includes nickel and phosphorus, and solder formed with tin and an alkaline earth metal. This innovation enhances the solder bonding property, preventing peeling during solder reflow.

Career Highlights

Throughout his career, Tetsuya Hayashida has worked with various companies, including Renesas Technology Corporation. His expertise in semiconductor technology has positioned him as a key figure in the industry.

Collaborations

Hayashida has collaborated with notable professionals, including Norihiko Kasai, to advance his research and innovations in semiconductor devices.

Conclusion

Tetsuya Hayashida's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His work continues to impact the development of advanced semiconductor devices.

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