This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Tokyo Electron Limited. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Tetsuji Ueno and Advances in Substrate Processing
Introduction
Tetsuji Ueno is an inventor associated with Yamanashi, Japan, and Tokyo Electron Limited. His patent work addresses semiconductor substrate preparation and processing.
Latest Patents
Ueno is named on 1 patent: “Substrate Processing Method and Substrate Processing Apparatus.” The method describes removing a silicon oxide film from a silicon substrate using fluorine-containing and basic gases, followed by hydrogen treatment and thermal processing. It then uses a diluted germanium-containing gas for pre-cleaning before forming a silicon germanium film through epitaxial growth.
Career Highlights
Ueno’s disclosed invention focuses on a sequence of substrate-cleaning and preparation steps intended to precede silicon germanium epitaxial growth. The patent lists Tokyo Electron Limited as the company with which he is associated.
Collaborations
Shuntaro Takahashi is identified as Ueno’s coworker.
Conclusion
Tetsuji Ueno’s patent reflects work on semiconductor substrate processing, particularly the preparation of silicon surfaces for silicon germanium film growth.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile