Hitachi, Japan

Tetsuji Fujimoto


Average Co-Inventor Count = 4.5

ph-index = 1

Forward Citations = 10(Granted Patents)


Location History:

  • Hitachi, JP (2013)
  • Ibaraki, JP (2021)

Company Filing History:


Years Active: 2013-2025

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3 patents (USPTO):Explore Patents

Title: Tetsuji Fujimoto: Innovator in Gallium Nitride Technology

Introduction

Tetsuji Fujimoto is a prominent inventor based in Hitachi, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of gallium nitride substrates and crystals. With a total of three patents to his name, Fujimoto's work has had a notable impact on the industry.

Latest Patents

Fujimoto's latest patents include a gallium nitride single crystal substrate and a nitride crystal. The gallium nitride single crystal substrate is characterized by a diameter of 50 mm or more, with specific etching properties that enhance its quality. The nitride crystal aims to improve the performance and manufacturing yield of semiconductor devices, featuring a composition formula of InAlGaN and a hardness exceeding 22.0 GPa.

Career Highlights

Throughout his career, Tetsuji Fujimoto has worked with reputable companies such as Sumitomo Chemical Company, Limited and Hitachi Cable, Inc. His experience in these organizations has contributed to his expertise in semiconductor materials and technologies.

Collaborations

Fujimoto has collaborated with notable colleagues, including Toshio Kitamura and Kazuyuki Ilzuka. These partnerships have fostered innovation and advancements in their respective fields.

Conclusion

Tetsuji Fujimoto's contributions to gallium nitride technology and his collaborations with esteemed colleagues highlight his role as a key innovator in the semiconductor industry. His patents reflect a commitment to enhancing the quality and performance of semiconductor devices.

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