Sumitomo Chemical Company, Limited

Hitachi Cable, Inc.

Sciocs Company Limited

Tetsuji Fujimoto

Toshio Kitamura

Takehiro Yoshida

Hajime Fujikura

Masatomo Shibata

Katsuya Akimoto

Masahiro Watanabe

Takashi Sato

Takayuki Suzuki

Taichiro Konno

Kazuyuki Ilzuka

There is provided a gallium nitride single crystal substrate, which is a gallium nitride single crystal substrate that has a diameter of 50 mm or more and whose low index crystal plane closest to a main surface is a (0001) plane, wherein a density of etch pits when applying etching to the main surface with an alkaline etching solution is less than 1×10cm, and among peaks appearing in a histogram of diameters of the etch pits, when a diameter of a first peak appearing on a smallest diameter-side is a, a total number of the etch pits with a diameter exceeding 4is 1/1000 or less of a number of etch pits forming the first peak.

Gallium nitride single crystal substrate

An object of the present invention is to improve quality of a group-III nitride crystal, and also improve performance and manufacturing yield of a semiconductor device manufactured using the crystal. Provided is a nitride crystal represented by the composition formula of InAlGaN (satisfying 0&#x2264;x&#x2264;1, 0&#x2264;y&#x2264;1, 0&#x2264;x+y&#x2264;1), with a hardness exceeding 22.0 GPa as measured by a nanoindentation method using an indenter with a maximum load applied thereto being within a range of 1 mN or more and 50 mN or less.

Nitride crystal

A light emitting device has a light emitting layer having a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type, and an active layer sandwiched between the first semiconductor layer and the second semiconductor layer, a reflecting layer provided on a side of one surface of the light emitting layer, which reflects a light emitted from the active layer, a supporting substrate provided on an opposite side of the reflecting layer with respect to the light emitting layer, which supports the light emitting layer via an adhesion layer, an ohmic contact portion provided on a part of the reflecting layer, which electrically connects between the reflecting layer and the light emitting layer, and convexo-concave portions formed on other surface of the light emitting layer and side surfaces of the light emitting layer, respectively, and an insulating film configured to cover the convexo-concave portions.

Light emitting device

Growing community of inventors

Hitachi, Japan

Tetsuji Fujimoto