Terry Kin Ting Ko

Title: The Innovations of Terry Kin Ting Ko

Introduction

Terry Kin Ting Ko is a notable inventor based in Millbrae, CA (US). He has made significant contributions to the field of technology, particularly in the development of magnetic random-access memory (MRAM) devices. With a total of 4 patents to his name, his work has had a considerable impact on the industry.

Latest Patents

Among his latest patents is a multi-layered bottom electrode for an MRAM device. This invention describes a bottom electrode for a magnetic tunnel junction (MTJ) device on a silicon nitride substrate. It comprises a bilayer of alpha tantalum on ruthenium, which lies on a nickel chrome layer over a second tantalum layer. Another significant patent involves a process to fabricate the bottom electrode for the MRAM device. This process facilitates the formation of the bottom electrode by including a protective coating that is partly consumed during the etching of the alpha tantalum portion. The adhesion to silicon nitride is enhanced by using a tantalum nitride/nickel chrome bilayer as a 'glue'.

Career Highlights

Terry has worked with several companies throughout his career, including Magic Technologies, Inc. and Headway Technologies, Incorporated. His experience in these organizations has allowed him to refine his skills and contribute to various innovative projects.

Collaborations

Throughout his career, Terry has collaborated with notable coworkers such as Tom Zhong and Wai-Ming Johnson Kan. These partnerships have further enriched his work and led to advancements in technology.

Conclusion

Terry Kin Ting Ko's contributions to the field of MRAM technology are noteworthy. His innovative patents and collaborations highlight his dedication to advancing technology. His work continues to influence the industry and inspire future innovations.