The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2012
Filed:
Nov. 19, 2010
Rongfu Xiao, Fremont, CA (US);
Cheng T. Horng, San Jose, CA (US);
Ru-ying Tong, Los Gatos, CA (US);
Chyu-jinh Torng, Pleasanton, CA (US);
Tom Zhong, Cupertino, CA (US);
Witold Kula, Cupertino, CA (US);
Terry Kin Ting Ko, Millbrae, CA (US);
Wei Cao, San Jose, CA (US);
Wai-ming J. Kan, San Ramon, CA (US);
Liubo Hong, San Jose, CA (US);
Rongfu Xiao, Fremont, CA (US);
Cheng T. Horng, San Jose, CA (US);
Ru-Ying Tong, Los Gatos, CA (US);
Chyu-Jinh Torng, Pleasanton, CA (US);
Tom Zhong, Cupertino, CA (US);
Witold Kula, Cupertino, CA (US);
Terry Kin Ting Ko, Millbrae, CA (US);
Wei Cao, San Jose, CA (US);
Wai-Ming J. Kan, San Ramon, CA (US);
Liubo Hong, San Jose, CA (US);
MagIC Technologies, Inc., Milpitas, CA (US);
Abstract
Formation of a bottom electrode for an MTJ device on a silicon nitride substrate is facilitated by including a protective coating that is partly consumed during etching of the alpha tantalum portion of said bottom electrode. Adhesion to SiN is enhanced by using a TaN/NiCr bilayer as 'glue'.