Hsinchu, Taiwan

Te-Jui Yen

This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Te-Jui Yen. Retrieved from https://idiyas.com/inventor/te-jui-yen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Te-Jui Yen and Semiconductor Manufacturing Innovation.

Introduction

Te-Jui Yen is an inventor based in Hsinchu, Taiwan. His patent work addresses semiconductor device structures and manufacturing processes. He is associated with Taiwan Semiconductor Manufacturing Company Limited and has 1 patent listed in the information provided.

Latest Patents

Yen’s patent, “Semiconductor Device and Manufacturing Method Thereof,” describes a process for forming a source/drain contact and via while sealing an air gap in an interlayer dielectric layer. The method forms an implantation energy absorption dielectric layer over the interlayer dielectric, then uses an implantation process that causes the dielectric layer to expand and seal the air gap. It subsequently adds two implant-free dielectric layers and forms a source/drain via through the layers to connect with the source/drain contact.

Career Highlights

The patent reflects Yen’s work on semiconductor fabrication, particularly dielectric-layer processing and electrical connections to source/drain regions. His listed company affiliation is Taiwan Semiconductor Manufacturing Company Limited.

Collaborations

Yen’s listed coworkers include Chi On Chui and Liang-Yin Chen. Their names are associated with his professional and patent-related context in the information provided.

Conclusion

Te-Jui Yen’s patent focuses on a semiconductor manufacturing method that seals an air gap and forms a reliable path to a source/drain contact, highlighting his contribution to device fabrication technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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