Tokyo, Japan

Tatsuya Yabusame


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2004-2006

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2 patents (USPTO):Explore Patents

Title: Tatsuya Yabusame: Innovator in Silicon Crystal Growth Technology

Introduction

Tatsuya Yabusame is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of silicon crystal growth technology. With a total of 2 patents, his work focuses on improving the efficiency and cost-effectiveness of the Czochralski method.

Latest Patents

Yabusame's latest patents include an "Apparatus and method for supplying crystalline materials in Czochralski method." This invention utilizes an apparatus equipped with an inner vessel that has an opening at the bottom for charging granular solid material. The outer vessel contains the inner vessel and allows for sliding movement to close the opening. This design prevents splashing of molten material and enables static additional charging, thereby reducing material costs and minimizing the risk of cracking due to rapid heating. His second patent, "Single crystal pulling apparatus," focuses on enhancing the flexibility of a divided type graphite crucible to avoid damage to quartz crucibles. This innovative design includes a protrusion that fits into an opening on a crucible tray, ensuring efficient operation during the silicon single crystal growing process.

Career Highlights

Yabusame is currently employed at Sumitomo Mitsubishi Silicon Corporation, where he continues to develop cutting-edge technologies in silicon crystal growth. His work has significantly impacted the efficiency and cost of silicon production, making him a valuable asset to the company.

Collaborations

Throughout his career, Yabusame has collaborated with notable colleagues, including Katsunori Nakashima and Fumio Yamanaka. These partnerships have fostered innovation and advancement in their shared field of expertise.

Conclusion

Tatsuya Yabusame's contributions to silicon crystal growth technology exemplify the importance of innovation in the industry. His patents reflect a commitment to improving processes and reducing costs, solidifying his reputation as a leading inventor in this field.

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