The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 2006

Filed:

Apr. 22, 2004
Applicants:

Katsunori Nakashima, Tokyo, JP;

Tatsuya Yabusame, Tokyo, JP;

Fumio Yamanaka, Tokyo, JP;

Inventors:

Katsunori Nakashima, Tokyo, JP;

Tatsuya Yabusame, Tokyo, JP;

Fumio Yamanaka, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/02 (2006.01); C30B 15/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

In supplying crystalline materials in the Czochralski method, it is made use of an apparatus equipped with an inner vessel having an opening portion at the lower part or bottom thereof, which is to be charged with a granular solid material, an outer vessel containing the inner vessel therein with the function of sliding movement and thus closing the opening portion, and pull-up means for suspending the inner vessel and outer vessel in a manner causing them to ascend or descend, wherein the opening portion is opened through a sliding motion of the inner vessel or outer vessel for additional charging or recharging of the solid material into the molten material in the crucible, with the result that the molten material in the crucible can be prevented from splashing, the additional charging can be carried out in a static manner, the material cost becomes low and there is no risk of cracking due to rapid heating. Further, the productivity in silicon single crystal growing can be improved, the crucible can be used efficiently and the life of the furnace parts can be prolonged and, as a result, the cost of silicon single crystal growing can be markedly reduced.


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Nakashima, Katsunori. (2006). Apparatus and method for supplying crystalline materials in czochralski method (U.S. Patent No. 7001456). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7001456

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