This inventor holds 2 USPTO granted patents. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2015-2017.
Company Filing History:
Years Active: 2015-2017
Title: Tassa Yang - Innovator in Memory Circuit Technology
Introduction
Tassa Yang is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of memory circuit technology, holding 2 patents that showcase his innovative approach to programming memory circuits.
Latest Patents
Tassa Yang's latest patents include a method for programming a memory circuit. This method involves applying a first voltage setting to a memory cell for a specified period in response to a programming command. If the stored logical state of the memory cell differs from the intended logical state, a second voltage setting is applied to ensure accuracy. Another patent details a similar method, where a first voltage setting is applied to both nodes of a selected memory cell, followed by a retrial if discrepancies are found.
Career Highlights
Tassa Yang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work focuses on enhancing memory circuit technologies, contributing to advancements in electronic devices.
Collaborations
Tassa has collaborated with talented coworkers, including Wen-Ting Chu and Yi-Chieh Chiu, who have supported his innovative projects and contributed to the development of cutting-edge technologies.
Conclusion
Tassa Yang's work in memory circuit technology exemplifies the spirit of innovation. His patents reflect a commitment to improving electronic memory systems, making a lasting impact in the field.