The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2015
Filed:
Aug. 05, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yi-Chieh Chiu, Taipei, TW;
Chih-Yang Chang, Yuanling Township, TW;
Tassa Yang, Hsinchu, TW;
Wen-Ting Chu, Kaohisung, TW;
Abstract
A method includes applying a first voltage setting to a first node and a second node of a selected memory cell for a first predetermined period of time in response to a command for programming a first logical state to the selected memory cell. A first stored logical state of the selected memory cell is obtained after the applying the first voltage setting operation. If the first stored logical state differs from the first logical state, a second voltage setting is applied to the first node and the second node of the selected memory cell; and a first retrial is performed. The first retrial includes applying the first voltage setting to the first node and the second node of the selected memory cell for the first predetermined period of time.