Newbury Park, CA, United States of America

Takyiu Liu

USPTO Granted Patents = 8 

Average Co-Inventor Count = 2.7

ph-index = 4

Forward Citations = 166(Granted Patents)


Company Filing History:


Years Active: 1996-1998

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8 patents (USPTO):Explore Patents

Title: Takyiu Liu: Innovator in Semiconductor Technology

Introduction

Takyiu Liu is a prominent inventor based in Newbury Park, California, known for his significant contributions to semiconductor technology. With a total of eight patents to his name, Liu has made remarkable advancements in the field of epitaxial growth and high-speed electronics.

Latest Patents

One of Liu's latest patents is titled "Effective constant doping in a graded compositional alloy." This invention focuses on achieving epitaxial growth of a chirped superlattice with constant dopings while minimizing growth interruption time. The method involves doping only one of the two compositions during the growth of its layer, allowing for a uniform doping scheme without the need to change the doping cell temperature. Another notable patent is the "Method of making high-speed, low-noise millimeterwave HEMT." This patent describes an epitaxial structure and manufacturing method for a field-effect transistor capable of high-speed, low-noise applications across microwave, submillimeterwave, and millimeterwave frequencies.

Career Highlights

Throughout his career, Takyiu Liu has worked with notable companies such as Hughes Aircraft Company and Hughes Electronics Corporation. His experience in these organizations has contributed to his expertise in semiconductor technologies and innovations.

Collaborations

Liu has collaborated with several professionals in his field, including Chanh N Nguyen and Mehran Matloubian. These collaborations have further enhanced his research and development efforts in semiconductor technology.

Conclusion

Takyiu Liu's innovative work in semiconductor technology and his impressive portfolio of patents highlight his significant impact on the industry. His contributions continue to influence advancements in high-speed electronics and epitaxial growth techniques.

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