The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 1997
Filed:
Jun. 06, 1995
Applicant:
Inventors:
Mehran Matloubian, Encino, CA (US);
Takyiu Liu, Newbury Park, CA (US);
Chanh Nguyen, Newbury Park, CA (US);
Assignee:
Hughes Aircraft Company, Los Angeles, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257192 ; 257194 ; 257613 ; 438172 ; 148 334 ; 117 89 ;
Abstract
An epitaxial structure and method of manufacture for a field-effect transistor capable of low-noise and power applications. Preferably, the epitaxial structure includes an N-type barrier layer comprising a wide-gap semiconductor material having the formula Al.sub.1-y Ga.sub.y P.sub.0.71+z Sb.sub.0.29-z.
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Matloubian, Mehran. (1997). Low-noise and power algapsb/gainas hemts and pseudomorpohic hemts on (U.S. Patent No. 5663583). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5663583
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