Chiyoda-ku, Japan

Takuya Oga


 

Average Co-Inventor Count = 5.1

ph-index = 2

Forward Citations = 8(Granted Patents)


Location History:

  • Tokyo, JP (2015)
  • Chiyoda-ku, JP (2012 - 2016)

Company Filing History:


Years Active: 2012-2016

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4 patents (USPTO):Explore Patents

Title: Takuya Oga: Innovator in Semiconductor Technology

Introduction

Takuya Oga is a prominent inventor based in Chiyoda-ku, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on improving the efficiency and reliability of semiconductor devices.

Latest Patents

Among his latest patents, Takuya Oga has developed a semiconductor device that features a unique integration of components. This device includes a first lead joined with the bottom electrode of a MOS-FET using first solder, while the top electrode of the MOS-FET is connected to an internal lead with second solder. The internal lead is then joined with a projection of a second lead using third solder. The entire assembly is integrally molded with sealing resin, enhancing stability through self-alignment. Another notable patent is a power semiconductor module that integrates an electrode plate with a semiconductor chip. This design improves heat dissipation properties and reliability while allowing for a reduction in size.

Career Highlights

Takuya Oga is currently employed at Mitsubishi Electric Corporation, where he continues to innovate in semiconductor technology. His work has been instrumental in advancing the capabilities of power semiconductor modules and devices.

Collaborations

He has collaborated with notable coworkers, including Masaki Kato and Dai Nakajima, contributing to various projects that enhance the functionality and efficiency of semiconductor products.

Conclusion

Takuya Oga's contributions to semiconductor technology through his innovative patents and collaborations highlight his role as a key figure in the industry. His work continues to influence advancements in this critical field.

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