The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2015
Filed:
Apr. 18, 2011
Takuya Oga, Chiyoda-ku, JP;
Masaki Kato, Chiyoda-ku, JP;
Tsuyoshi Sugihara, Chiyoda-ku, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
Provided is a semiconductor device including: a first MOS-FET () joined to a first base plate () via solder (); a second MOS-FET () joined to a second base plate () via solder (); a first lead () joining the first base plate () and the second MOS-FET (); and a second lead () joining the second MOS-FET () and a current path member () that gives and receives current flowing through the MOS-FETs () to and from the outside. The second base plate () is more rigid than both the leads (), a boundary line (D-D) intersects the second base plate () without intersecting both the leads (), the boundary line including a gap portion () along which both the MOS-FETs () are opposed to each other, extending in the direction in which both the MOS-FETs () are not opposed to each other.