Location History:
- Hitachi, JP (2009 - 2010)
- Higashiura, JP (2014)
Company Filing History:
Years Active: 2009-2014
Title: Takuo Nagase: Innovator in Semiconductor Technology
Introduction
Takuo Nagase is a prominent inventor based in Hitachi, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.
Latest Patents
Nagase's latest patents include a semiconductor integrated circuit with high withstand voltage element forming trench isolation on a substrate. This innovation involves the formation of annular isolation trenches that enhance the separation of semiconductor layers, improving device reliability. Another notable patent is for a semiconductor device and plasma display device that utilizes a driving method to achieve low power consumption and cost. This method employs an IGBT as a switch element, allowing for a reduction in the loss of the driving circuit and the number of components required.
Career Highlights
Throughout his career, Takuo Nagase has worked with leading companies in the technology sector, including Hitachi, Ltd. and Renesas Technology Corporation. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.
Collaborations
Nagase has collaborated with notable colleagues such as Mutsuhiro Mori and Junichi Sakano. These partnerships have contributed to the advancement of his projects and the successful implementation of his inventions.
Conclusion
Takuo Nagase's contributions to semiconductor technology have established him as a key figure in the field. His innovative patents and collaborations reflect his commitment to advancing technology and improving device performance.