The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2014
Filed:
Jul. 21, 2011
Takuo Nagase, Higashiura, JP;
Junichi Sakano, Hitachi, JP;
Takuo Nagase, Higashiura, JP;
Junichi Sakano, Hitachi, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A first annular isolation trench is formed in a periphery of an element region, and a second annular isolation trench is formed around the first annular isolation trench with a predetermined distance provided from the first annular isolation trench, and a semiconductor layer between the first annular isolation trench and the second annular isolation trench is separated into a plurality of portions by a plurality of linear isolation trenches formed in the semiconductor layer between the first annular isolation trench and the second annular isolation trench, and the semiconductor layer (source-side isolation region) which opposes a p-type channel layer end portion and is located between the first annular isolation trench and the second annular isolation trench is separated from other semiconductor layers (drain-side isolation regions) by the linear isolation trenches.