The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2009
Filed:
Jan. 19, 2007
Takuo Nagase, Hitachi, JP;
Mutsuhiro Mori, Mito, JP;
Takuo Nagase, Hitachi, JP;
Mutsuhiro Mori, Mito, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
In a semiconductor device having a pair of IGBT and diode which are connected to each other in inverse-parallel in which a collector-electrode of the IGBT and a cathode-electrode of the diode are wired to each other, and an emitter-electrode of the IGBT and an anode-electrode of the diode are wired to each other, when a breakdown voltage of a junction of a p-type emitter layer and an n-type buffer layer of the IGBT is represented as BVec, and a forward voltage occurring while the diode transits from a state of blocking to a state of forward conduction is represented as VF, a relationship of VF<BVec is satisfied in a predetermined current value Id of a current flowing in the diode, and the maximal doping concentration of the n-type cathode layer of the diode is higher than that of the n-type buffer layer of the IGBT.