Kanagawa, Japan

Takayuki Inoue

USPTO Granted Patents = 39 


Average Co-Inventor Count = 4.3

ph-index = 8

Forward Citations = 275(Granted Patents)


Location History:

  • Atsugi, JP (2010 - 2014)
  • Kanagawa, JP (2008 - 2017)
  • Isehara, JP (2014 - 2020)
  • Sagamihara, JP (2016 - 2022)

Company Filing History:


Years Active: 2008-2022

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39 patents (USPTO):Explore Patents

Title: Innovations and Contributions of Takayuki Inoue in Semiconductor Technology

Introduction

Takayuki Inoue is a prominent inventor based in Kanagawa, Japan, with an impressive portfolio of 39 patents to his name. His work primarily focuses on advancements in semiconductor technology, which has significantly impacted various electronic applications. Inoue’s latest inventions showcase innovative methods in manufacturing semiconductor devices, showcasing his expertise and commitment to enhancing electronic performance.

Latest Patents

Among his most recent patents, Inoue introduced a semiconductor device and a method for manufacturing a semiconductor device. The manufacturing method aims to adjust the threshold to an appropriate value for optimal performance. The invented semiconductor device includes a semiconductor, a source or drain electrode connected to it, a first and second gate electrode sandwiching the semiconductor, an electron trap layer positioned between the first gate electrode and the semiconductor, and a gate insulating layer between the second gate electrode and the semiconductor. The method emphasizes trapping electrons in the electron trap layer by maintaining a higher potential at the first gate electrode than at the source or drain electrode for over one second, alongside heating. This innovation effectively increases the threshold and reduces Icut.

Furthermore, Inoue's method for manufacturing a semiconductor device aims to produce an oxide semiconductor film with stable electric characteristics and high reliability. The methodology involves forming a crystalline oxide semiconductor film by utilizing the difference in atomic weight of various atoms in the oxide semiconductor target. Specifically, zinc, having a lower atomic weight, is preferentially deposited, creating a seed crystal, while atoms like tin or indium with higher atomic weights are deposited on it, promoting crystal growth. This results in the formation of a single crystal oxide semiconductor film or a substantially single crystal oxide semiconductor film, enhancing the overall performance of the semiconductor devices.

Career Highlights

Throughout his career, Takayuki Inoue has made significant contributions to several companies, prominently including Semiconductor Energy Laboratory Co., Ltd. and Ricoh Company Ltd. His work in these organizations has led to groundbreaking advancements in semiconductor technology, exemplifying his role as an influential figure in the industry.

Collaborations

Inoue has collaborated with notable individuals in the field, such as Shunpei Yamazaki and Yoshiyuki Kurokawa. These partnerships have catalyzed various successful projects and patents, enhancing the research and development of innovative semiconductor technologies.

Conclusion

Takayuki Inoue’s extensive experience and innovative approach in the semiconductor industry have undoubtedly positioned him as a leading inventor. With 39 patents contributing to advancements in semiconductor technology, his work continues to drive improvements in electronic performance and reliability. The techniques and methodologies he has developed are essential for the continued evolution of semiconductor devices, making a substantial impact on the future of technology.

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