The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2016
Filed:
Jul. 02, 2014
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Tetsuhiro Tanaka, Kanagawa, JP;
Takayuki Inoue, Kanagawa, JP;
Yoshitaka Yamamoto, Kanagawa, JP;
Hideomi Suzawa, Kanagawa, JP;
Tamae Moriwaka, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
To provide a semiconductor device in which the threshold value is controlled. Furthermore, to provide a semiconductor device in which a deterioration in electrical characteristics which becomes more noticeable as a transistor is miniaturized can be suppressed. The semiconductor device includes a first semiconductor film, a source electrode and a drain electrode electrically connected to the first semiconductor film, a gate insulating film, and a gate electrode in contact with the gate insulating film. The gate insulating film includes a first insulating film and a trap film, and charge is trapped in a charge trap state in an interface between the first insulating film and the trap film or inside the trap film.