Niiza, Japan

Takashi Yoshida

This inventor holds 3 USPTO granted patents. Top assignee: Sanken Electric Co., Ltd.. Active years: 2008-2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takashi Yoshida. Retrieved from https://idiyas.com/inventor/takashi-yoshida-0qb734x6

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 2

Forward Citations = 10(Granted Patents)


Company Filing History:


Years Active: 2008-2010

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3 patents (USPTO):Explore Patents

Title: Takashi Yoshida: Innovator in Nitride-Based Semiconductor Technology

Introduction

Takashi Yoshida is a prominent inventor based in Niiza, Japan, known for his contributions to the field of semiconductor technology. With a total of 3 patents to his name, he has made significant advancements in light-emitting devices, particularly those utilizing nitride-based materials.

Latest Patents

Yoshida's latest patents include a nitride-based semiconductor device designed to reduce voltage drop. This innovative light-emitting device features a main semiconductor region formed via an n-type AlInGaN buffer region on a p-type silicon substrate. The substrate is sufficiently electroconductive to provide part of the current path through the device. The main semiconductor region comprises an n-type GaN layer, an active layer, and a p-type GaN layer, which are successively epitaxially grown on the buffer region. A heterojunction is created between the p-type substrate and the n-type buffer region, facilitating carrier transportation and reducing the drive voltage requirement of the LED.

Another notable patent by Yoshida is a method of fabricating a light-emitting diode built on a silicon substrate doped with a p-type impurity. This substrate possesses sufficient conductivity to provide part of the current path through the LED. The p-type silicon substrate has an n-type AlInGaN buffer region epitaxially grown on it, followed by the main semiconductor region, which includes a lower confining layer of n-type GaN, an active layer for generating light, and an upper confining layer of p-type GaN. The thermal diffusion of gallium and other Group III elements from the buffer region into the p-type silicon substrate creates a low-resistance region, further enhancing the device's performance.

Career Highlights

Yoshida is currently associated with Sanken Electric Co., Ltd., where he continues to innovate in the semiconductor field. His work has significantly impacted the development of efficient light-emitting devices, contributing to advancements in various applications.

Collaborations

Throughout his career, Yoshida has collaborated with notable colleagues, including Junji Sato and Koji Otsuka. These collaborations have fostered a productive environment for innovation and development in semiconductor technology.

Conclusion

Takashi Yoshida's contributions to nitride-based semiconductor technology have established him as a key figure in the field

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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