The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2010
Filed:
Mar. 15, 2006
Koji Otsuka, Niiza, JP;
Tetsuji Moku, Niiza, JP;
Junji Sato, Niiza, JP;
Yoshiki Tada, Niiza, JP;
Takashi Yoshida, Niiza, JP;
Koji Otsuka, Niiza, JP;
Tetsuji Moku, Niiza, JP;
Junji Sato, Niiza, JP;
Yoshiki Tada, Niiza, JP;
Takashi Yoshida, Niiza, JP;
Sanken Electric Co., Ltd., , JP;
Abstract
A light-emitting device has a main semiconductor region formed via an n-type AlInGaN buffer region on a p-type silicon substrate, the latter being sufficiently electroconductive to provide part of the current path through the device. Constituting the primary working part of the LED, the main semiconductor region comprises an n-type GaN layer, an active layer, and a p-type GaN layer, which are successively epitaxially grown in that order on the buffer region. A heterojunction is created between p-type substrate and n-type buffer region. Carrier transportation from substrate to buffer region is expedited by the interface levels of the heterojunction, with a consequent reduction of the drive voltage requirement of the LED.