This inventor holds 1 USPTO granted patent. Top assignee: Other. Active years: 2003.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
1 out of 834,659 Years Active: 2003
Title: The Innovations of Takashi Katakura in Semiconductor Technology
Introduction
Takashi Katakura is a renowned inventor based in Tokyo, Japan, with a significant contribution to the field of semiconductor technology. His innovative work has led to the development of a unique method for manufacturing a Silicon On Insulator (SOI) substrate, which is crucial in enhancing the performance of semiconductor devices.
Latest Patents
Katakura holds a patent titled "SOI substrate, method of manufacture thereof, and semiconductor device using SOI substrate." The patent outlines a manufacturing method that involves several intricate steps. It includes forming an oxide film on the surfaces of a silicon substrate, applying a resist layer, removing portions of the oxide film to expose the substrate's surfaces, and subsequently treating the substrate to create a desired oxide layer. This detailed process is vital for developing efficient semiconductor devices that leverage advanced materials.
Career Highlights
Throughout his career, Takashi Katakura has dedicated himself to advancing semiconductor technologies. His singular focus on improving substrate manufacturing methods has established him as a pivotal figure in this industry. With one patent to his name, his work continues to influence current semiconductor research and development.
Collaborations
Katakura has had the opportunity to collaborate with esteemed colleagues such as Masaru Takamatsu and Toshiaki Iwamatsu. These collaborations have enriched his work and allowed for the exchange of innovative ideas that further enhance the field of semiconductor technology.
Conclusion
In conclusion, Takashi Katakura's contributions to the field of semiconductor technology are noteworthy. His patented method for creating an SOI substrate reflects a deeper understanding of material science and manufacturing techniques. As technology continues to advance, Katakura's innovations will undoubtedly play a crucial role in shaping the future of semiconductor devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile