Other

Takashi Katakura

Toshiaki Iwamatsu

Hideki Naruoka

Masaru Takamatsu

A manufacturing method of a SOI substrate ( ) comprises the steps of: forming an oxide film ( ) at cross-sectional both main surfaces and cross-sectional both end surfaces of a silicon substrate ( ); forming a resist layer ( ) on the oxide film ( ) at cross-sectional both end surfaces of the substrate ( ); and removing the oxide film ( ) at those portions which are left from the covering of the resist layer ( ), to thereby expose the both main surfaces of the substrate ( ). Next, the resist layer ( ) is removed to thereby leave the oxide film ( ) at the both end surfaces of the substrate ( ); and oxygen ions (I) are dosed into the substrate ( ) from one of the exposed both main surfaces, followed by an anneal processing to thereby form an oxide layer (14) in a region at a predetermined depth from the one main surface of the substrate ( ). The oxide film ( ) left on the both end surfaces of the substrate ( ) is then removed.

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Tokyo, Japan

Takashi Katakura