The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2003
Filed:
Mar. 01, 2001
Masaru Takamatsu, Tokyo, JP;
Takashi Katakura, Tokyo, JP;
Toshiaki Iwamatsu, Tokyo, JP;
Hideki Naruoka, Tokyo, JP;
Other;
Abstract
A manufacturing method of a SOI substrate ( ) comprises the steps of: forming an oxide film ( ) at cross-sectional both main surfaces and cross-sectional both end surfaces of a silicon substrate ( ); forming a resist layer ( ) on the oxide film ( ) at cross-sectional both end surfaces of the substrate ( ); and removing the oxide film ( ) at those portions which are left from the covering of the resist layer ( ), to thereby expose the both main surfaces of the substrate ( ). Next, the resist layer ( ) is removed to thereby leave the oxide film ( ) at the both end surfaces of the substrate ( ); and oxygen ions (I) are dosed into the substrate ( ) from one of the exposed both main surfaces, followed by an anneal processing to thereby form an oxide layer (14) in a region at a predetermined depth from the one main surface of the substrate ( ). The oxide film ( ) left on the both end surfaces of the substrate ( ) is then removed.