Yokohama, Japan

Takanori Hayano

USPTO Granted Patents = 3 

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2018-2021

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3 patents (USPTO):Explore Patents

Title: Takanori Hayano: Innovator in Vapor Phase Growth Technology

Introduction

Takanori Hayano is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of vapor phase growth technology, holding a total of 3 patents. His work focuses on improving the efficiency and effectiveness of deposition processes for substrates.

Latest Patents

One of Hayano's latest patents is a vapor phase growth apparatus and method. This innovative apparatus includes multiple reactors that perform deposition processes for several substrates simultaneously. It features a first main gas supply path that distributes a predetermined amount of first process gas, which includes a group-III element, to the reactors. Additionally, a second main gas supply path distributes a predetermined amount of second process gas, containing a group-V element, to the reactors at the same time. The apparatus is equipped with a controller that manages the flow rates of both gases based on control values. It also allows for the independent control of predetermined process parameters for each reactor, utilizing rotary drivers and a heater.

Career Highlights

Takanori Hayano is currently employed at Nuflare Technology, Inc., where he continues to develop innovative solutions in vapor phase growth technology. His expertise and dedication to research have positioned him as a key figure in his field.

Collaborations

Hayano collaborates with talented coworkers, including Yuusuke Sato and Hideshi Takahashi. Their combined efforts contribute to the advancement of technology in their industry.

Conclusion

Takanori Hayano is a notable inventor whose work in vapor phase growth technology has led to significant advancements. His patents reflect his commitment to innovation and excellence in the field.

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