The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 21, 2021

Filed:

Jun. 26, 2019
Applicant:

Nuflare Technology, Inc., Yokohama, JP;

Inventors:

Yuusuke Sato, Bunkyo-ku, JP;

Hideshi Takahashi, Yokohama, JP;

Hideki Ito, Yokohama, JP;

Takanori Hayano, Yokohama, JP;

Assignee:

NuFlare Technology, Inc., Yokohama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/40 (2006.01); C23C 16/52 (2006.01); C23C 16/44 (2006.01); C30B 25/10 (2006.01); C30B 25/16 (2006.01); C23C 16/455 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C30B 29/406 (2013.01); C23C 16/4412 (2013.01); C23C 16/45561 (2013.01); C23C 16/45565 (2013.01); C23C 16/45574 (2013.01); C23C 16/52 (2013.01); C30B 25/10 (2013.01); C30B 25/165 (2013.01); C30B 29/403 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01);
Abstract

A vapor phase growth apparatus according to an embodiment includes, n reactors performing a deposition process for a plurality of substrates at the same time, a first main gas supply path distributing a predetermined amount of first process gas including a group-III element to the n reactors at the same time, a second main gas supply path distributing a predetermined amount of second process gas including a group-V element to the n reactors at the same time, a controller controlling a flow rate of the first and second process gas, on the basis of control values of the flow rates of the first and second process gas supplied to the n reactors, and independently controlling predetermined process parameter independently set for each of the n reactors on the basis of control values, rotary drivers, and a heater.


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