The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 13, 2018

Filed:

May. 08, 2015
Applicant:

Nuflare Technology, Inc., Yokohama-shi, JP;

Inventors:

Takumi Yamada, Yokohama, JP;

Takanori Hayano, Yokohama, JP;

Tatsuhiko Iijima, Numazu, JP;

Yuusuke Sato, Bunkyo, JP;

Assignee:

NuFlare Technology Inc., Yokohama-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/16 (2006.01); H01L 21/67 (2006.01); H01L 21/66 (2006.01); H01L 21/02 (2006.01); H01L 33/00 (2010.01); C23C 16/52 (2006.01); C23C 16/46 (2006.01); C23C 16/30 (2006.01); C30B 29/40 (2006.01); H01L 33/12 (2010.01);
U.S. Cl.
CPC ...
H01L 21/67248 (2013.01); C23C 16/303 (2013.01); C23C 16/46 (2013.01); C23C 16/52 (2013.01); C30B 25/16 (2013.01); C30B 29/406 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 21/67109 (2013.01); H01L 22/10 (2013.01); H01L 22/26 (2013.01); H01L 33/0075 (2013.01); H01L 33/007 (2013.01); H01L 33/12 (2013.01);
Abstract

A vapor phase growth method of growing a film on a substrate by supplying material gases to the substrate while heating the substrate with a heating unit according to an embodiment, the method includes: measuring a temperature of the substrate with a radiation thermometer; executing a temperature feedback control to control an output of the heating unit to cause a measurement value of the radiation thermometer to have a set value when a film is not grown on the substrate; and executing a constant output control to maintain an output of the heating unit constant when a film causing thin-film interference in a wavelength measured by the radiation thermometer is grown on the substrate.


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