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Takahiro Tsuruda

This inventor holds 39 USPTO granted patents, primarily in Semiconductor Memory Devices. Top assignees: Mitsubishi Denki Kabushiki Kaisha, Renesas Technology Corp., Mitsubhishi Denki Kabsuhiki Kaisha. Active years: 1995-2007.

USPTO Granted Patents = 39

% Patents Active = 84.6

Average Co-Inventor Count = 2.7

ph-index = 12

Forward Citations = 649(Granted Patents)

Company Filing History:

33 out of 21,351

Mitsubishi Denki Kabushiki Kaisha

patents

4 out of 3,781

Renesas Technology Corp.

patents

1 out of 1

Mitsubhishi Denki Kabsuhiki Kaisha

patent

4. 1 out of 24

Mitsubushi Denki Kabushiki Kaisha

patents

Years Active: 1995-2007

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Areas of Expertise:

Semiconductor Memory

SOI Substrate

Nonvolatile Memory

High-Speed Operation

Memory Cell Transistors

Hierarchical Bit Line

Dynamic Memory

Multi-Bit Data

Chip Yields

Transistor Design

Manufacturing Process

Synchronous Type

39 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7242060 - Semiconductor memory device including an SOI substrate (2007-07-10),

2. 7138684 - Semiconductor memory device including an SOI substrate (2006-11-21),

3. 6787853 - Semiconductor device using an SOI substrate (2004-09-07),

4. 6768662 - Semiconductor memory device including an SOI substrate (2004-07-27),

5. 6606266 - Nonvolatile semiconductor memory device capable of writing multilevel data at high rate (2003-08-12),

6. 6586803 - Semiconductor device using an SOI substrate (2003-07-01),

7. 6577534 - Non-volatile semiconductor memory device having a low defective rate (2003-06-10),

8. 6577522 - Semiconductor memory device including an SOI substrate (2003-06-10),

9. 6487115 - Non-volatile semiconductor memory device with writing sequence enabling early-stage judgement of writing (2002-11-26),

10. 6385159 - Semiconductor memory device including an SOI substrate (2002-05-07),

11. 6384445 - Semiconductor memory device including memory cell transistors formed on SOI substrate and having fixed body regions (2002-05-07),

12. 6337506 - Semiconductor memory device capable of performing stable operation for noise while preventing increase in chip area (2002-01-08),

13. 6288949 - Semiconductor memory device including an SOI substrate (2001-09-11),

14. 6272034 - Semiconductor memory device (2001-08-07),

15. 6215720 - High speed operable semiconductor memory device with memory blocks arranged about the center (2001-04-10),

Title: The Innovative Mind of Takahiro Tsuruda

Introduction: Takahiro Tsuruda, based in Hyogo, Japan, is a notable inventor with an impressive portfolio that includes 39 patents. His significant contributions to the semiconductor industry have made him a key figure in advancing technologies related to memory devices.

Latest Patents: Among Tsuruda's most recent patents is a semiconductor memory device that features an SOI (Silicon On Insulator) substrate. This innovative memory device incorporates a plurality of N and P channel MOS transistors, with each transistor consisting of a source region, drain region, and a body region situated between them. Notably, the body region of at least one N channel MOS transistor is electrically fixed while the body region of at least one P channel MOS transistor remains floating, enhancing the device's performance and efficiency.

Career Highlights: Tsuruda has had a distinguished career, working with prestigious organizations such as Mitsubishi Electric Corporation and Renesas Technology Corporation. His expertise in semiconductor technology has led to groundbreaking advancements in memory device designs.

Collaborations: Throughout his career, Tsuruda has collaborated with esteemed colleagues including Hideto Hidaka and Katsuhiro Suma. Together, they have contributed to the development of innovative semiconductor technologies that continue to shape the industry.

Conclusion: Takahiro Tsuruda's dedication to innovation in the field of semiconductor memory devices is evident through his numerous patents. His work not only reflects his ingenuity but also underscores the importance of collaboration in driving technological advancements. As a leading inventor, Tsuruda's contributions will likely leave a lasting impact on the future of the semiconductor industry.

Profile summary based on public USPTO records.

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