Hyogo, Japan

Takahiro Tsuruda


Average Co-Inventor Count = 2.7

ph-index = 12

Forward Citations = 649(Granted Patents)


Company Filing History:


Years Active: 1995-2007

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39 patents (USPTO):Explore Patents

Title: The Innovative Mind of Takahiro Tsuruda

Introduction: Takahiro Tsuruda, based in Hyogo, Japan, is a notable inventor with an impressive portfolio that includes 39 patents. His significant contributions to the semiconductor industry have made him a key figure in advancing technologies related to memory devices.

Latest Patents: Among Tsuruda's most recent patents is a semiconductor memory device that features an SOI (Silicon On Insulator) substrate. This innovative memory device incorporates a plurality of N and P channel MOS transistors, with each transistor consisting of a source region, drain region, and a body region situated between them. Notably, the body region of at least one N channel MOS transistor is electrically fixed while the body region of at least one P channel MOS transistor remains floating, enhancing the device's performance and efficiency.

Career Highlights: Tsuruda has had a distinguished career, working with prestigious organizations such as Mitsubishi Electric Corporation and Renesas Technology Corporation. His expertise in semiconductor technology has led to groundbreaking advancements in memory device designs.

Collaborations: Throughout his career, Tsuruda has collaborated with esteemed colleagues including Hideto Hidaka and Katsuhiro Suma. Together, they have contributed to the development of innovative semiconductor technologies that continue to shape the industry.

Conclusion: Takahiro Tsuruda's dedication to innovation in the field of semiconductor memory devices is evident through his numerous patents. His work not only reflects his ingenuity but also underscores the importance of collaboration in driving technological advancements. As a leading inventor, Tsuruda's contributions will likely leave a lasting impact on the future of the semiconductor industry.

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