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For the Inventor, By the Inventor

Kyoto, Japan

Takaaki Fuchikami

USPTO Granted Patents = 23

Average Co-Inventor Count = 2.3

ph-index = 7

Forward Citations = 144(Granted Patents)


Location History:

  • Ukyo-ku, JP (1998 - 2003)
  • Kyoto-fu, JP (2011 - 2012)
  • Kyoto, JP (1996 - 2020)

Company Filing History:

goldMedal23 out of 5,996 
 
Rohm Co., Ltd.
 patents

Years Active: 1996-2020

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23 patents (USPTO):Explore Patents
1. 10818355 - Semiconductor memory apparatus (2020-10-27),
2. 10416744 - Data processing apparatus, structure and power generation apparatus including the same (2019-09-17),
3. 9195933 - Electronic circuit and electronic device including the same (2015-11-24),
4. 9100014 - Nonvolatile storage gate, operation method for the same, and nonvolatile storage gate embedded logic circuit, and operation method for the same (2015-08-04),
5. 9063843 - Data processing apparatus (2015-06-23),
6. 8537259 - Photoelectric conversion circuit and solid state imaging device including same (2013-09-17),
7. 8297120 - Angular velocity signal detection circuit and angular velocity signal detection method (2012-10-30),
8. 8194432 - Ferroelectric memory device for adjusting the capacitor of a bit line (2012-06-05),
9. 8125423 - Voltage control circuit, voltage control method and light control apparatus utilizing the same (2012-02-28),
10. 8018137 - Organic el element, organic el display device, and process for producing organic el element (2011-09-13),
11. 8014186 - Ferroelectric memory device and operating method for the same (2011-09-06),
12. 6580634 - Data memory device (2003-06-17),
13. 6545901 - Semiconductor memory device having a supplemental element for reading data stored in a memory element (2003-04-08),
14. 6145115 - Device for duplicating functions and a method for duplicating functions (2000-11-07),
15. 6124728 - Programmable functional device having ferroelectric material (2000-09-26),

Title: **Takaaki Fuchikami: Innovator in Semiconductor Technology**

Introduction

Takaaki Fuchikami is a distinguished inventor based in Kyoto, Japan, known for his significant contributions to semiconductor technology. With a remarkable portfolio of 23 patents, Fuchikami has demonstrated a profound ability to innovate and improve electronic components and systems.

Latest Patents

Among his latest patents, Fuchikami has developed a semiconductor memory apparatus that features a unique configuration utilizing static random access memory (SRAM). This device includes a memory cell consisting of a 6T or 4T2R design, which operates using ferroelectric capacitors to store data non-volatilely. The design allows for efficient data recovery through access transistors connected to bit lines, utilizing respective capacitive components as load capacitances.

Additionally, Fuchikami has contributed to the field with a data processing apparatus, which incorporates several power supplies and nonvolatile logic. This innovative system is capable of performing data processing based on the output states detected from the power supplies, showcasing an advanced integration of logic and power management.

Career Highlights

Fuchikami’s career has been marked by his work at Rohm Co., Ltd., a prominent company renowned for its semiconductor and electronic components. Throughout his tenure, he has not only filed numerous patents but also led various research initiatives to enhance the performance and reliability of semiconductor devices.

Collaborations

In his professional journey, Fuchikami has collaborated with esteemed colleagues, including Kiyoshi Nishimura and Hiromitsu Kimura. Together, they have contributed significantly to advancements in semiconductor technology and have fostered a collaborative environment that encourages innovation and excellence.

Conclusion

Takaaki Fuchikami continues to be a pivotal figure in the realm of semiconductor innovations. His extensive patent portfolio and collaborative efforts with fellow inventors underscore his commitment to advancing technology that drives the electronics industry forward. As he continues to innovate, Fuchikami’s work remains influential in shaping the future of semiconductor applications.

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