The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2020
Filed:
Apr. 30, 2019
Rohm Co., Ltd., Kyoto, JP;
Takaaki Fuchikami, Kyoto, JP;
Kazutaka Miyamoto, Kyoto, JP;
Hiromitsu Kimura, Kyoto, JP;
Kazuhisa Ukai, Kyoto, JP;
ROHM CO., LTD., Kyoto, JP;
Abstract
Disclosed is a semiconductor memory device including a memory cell based on a static random access memory having a 6T or 4T2R configuration and including a first internal node, a second internal node, a first ferroelectric capacitor, and a second ferroelectric capacitor, the first ferroelectric capacitor and the second ferroelectric capacitor having respective first ends connected respectively to the first internal node and the second internal node. For recovering data stored in a non-volatile fashion in the first ferroelectric capacitor and the second ferroelectric capacitor, a first access transistor connected between the first internal node and a first bit line and a second access transistor connected between the second internal node and a second bit line are turned on, and respective capacitive components of the first bit line and the second bit line are used as load capacitances.