This inventor holds 11 USPTO granted patents and 1 published patent application. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2022-2023.
Location History:
- Daegu, KR (2022 - 2023)
- Suwon-si, KR (2023)
Company Filing History:
Years Active: 2022-2023
Title: Taehyo Kim: Innovator in Memory Device Technology
Introduction
Taehyo Kim is a prominent inventor based in Daegu, South Korea. He has made significant contributions to the field of memory devices, holding a total of 11 patents. His work focuses on enhancing the efficiency and functionality of memory technology.
Latest Patents
One of Taehyo Kim's latest patents is a page buffer circuit and memory device that includes a memory cell array with multiple memory cells. This innovative memory device features a page buffer circuit that consists of page buffer units arranged in a horizontal direction. These units are connected to the memory cells via bit lines, along with cache latches that correspond to the page buffer units. Each page buffer unit contains one or more pass transistors linked to a sensing node, which is electrically connected to a corresponding bit line. The design ensures that each sensing node in the page buffer units and the combined sensing node are interconnected through the pass transistors, enhancing the overall performance of the memory device.
Career Highlights
Taehyo Kim is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to push the boundaries of memory technology and contribute to advancements in the field.
Collaborations
Throughout his career, Taehyo Kim has collaborated with notable colleagues, including Daeseok Byeon and Chanho Kim. These collaborations have fostered innovation and have been instrumental in the development of new technologies.
Conclusion
Taehyo Kim's contributions to memory device technology are noteworthy, and his patents reflect his commitment to innovation. His work continues to influence the industry and pave the way for future advancements in memory technology.