The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2022

Filed:

Apr. 13, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Taehyo Kim, Daegu, KR;

Daeseok Byeon, Seongnam-si, KR;

Chanho Kim, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2020.01); H01L 23/552 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/50 (2006.01); H01L 21/66 (2006.01); H01L 23/544 (2006.01); G01N 21/95 (2006.01);
U.S. Cl.
CPC ...
H01L 22/30 (2013.01); G01N 21/9505 (2013.01); H01L 23/544 (2013.01);
Abstract

A semiconductor device includes a semiconductor die, a semiconductor integrated circuit, an outer crack detection structure, a plurality of inner crack detection structures and a plurality of path selection circuits. The semiconductor die includes a central region and an edge region surrounding the central region. The semiconductor integrated circuit is in a plurality of sub regions of the central region. The outer crack detection structure is in the edge region. The plurality of inner crack detection structures are respectively in the plurality of sub regions, respectively. The path selection circuits are configured to control an electrical connection between the outer crack detection structure and the plurality of inner crack detection structures. A crack in the central region in addition to a crack in the edge region may be detected efficiently through selective electrical connection of the outer crack detection structure and the inner crack detection structures.


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