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For the Inventor, By the Inventor

Suwon-si, South Korea

Tae-wan Lim

USPTO Granted Patents = 11

Average Co-Inventor Count = 3.8

ph-index = 2

Forward Citations = 23(Granted Patents)


Company Filing History:

goldMedal11 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2011-2024

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11 patents (USPTO):
1. 11925015 - Vertical memory devices and methods of manufacturing the same (2024-03-05),
2. 10811421 - Vertical memory devices and methods of manufacturing the same (2020-10-20),
3. 10700088 - Semiconductor memory devices and methods for manufacturing the same (2020-06-30),
4. 10608091 - Semiconductor device and method for manufacturing the same (2020-03-31),
5. 10181476 - Semiconductor memory devices and methods for manufacturing the same (2019-01-15),
6. 10103236 - Semiconductor device and method for manufacturing the same (2018-10-16),
7. 9780096 - Vertical memory devices and methods of manufacturing the same (2017-10-03),
8. 9711603 - Semiconductor device and method for manufacturing the same (2017-07-18),
9. 9330966 - Methods of forming semiconductor devices (2016-05-03),
10. 8450170 - Semiconductor memory device and method of forming the same (2013-05-28),
11. 7952134 - Semiconductor memory device and method of forming the same (2011-05-31),

Title: The Innovative Contributions of Tae-wan Lim

Introduction

Tae-wan Lim is a prominent inventor based in Suwon-si, South Korea. He has made significant contributions to the field of memory devices, holding a total of 11 patents. His work has been instrumental in advancing technology in the semiconductor industry.

Latest Patents

One of Tae-wan Lim's latest patents focuses on vertical memory devices and methods of manufacturing the same. This innovation includes providing a substrate that consists of a cell array region and a peripheral circuit region. The process involves forming a mold structure in the cell array region and creating an opening for a common source line that passes through the mold structure. This opening extends in a first direction that is perpendicular to the top surface of the substrate. Additionally, a first contact plug is formed, which has an inner sidewall that delineates a recessed region in the opening for the common source line. Finally, a common source bit line contact is established, which is electrically connected to the inner sidewall of the first contact plug.

Career Highlights

Tae-wan Lim is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to be at the forefront of innovation in memory technology. His contributions have not only enhanced the company's product offerings but have also set new standards in the industry.

Collaborations

Throughout his career, Tae-wan Lim has collaborated with notable colleagues, including Hojong Kang and Joowon Park. These collaborations have fostered a creative environment that encourages the development of groundbreaking technologies.

Conclusion

Tae-wan Lim's innovative work in vertical memory devices exemplifies his commitment to advancing technology. His contributions at Samsung Electronics Co., Ltd. and his collaborations with fellow inventors highlight his significant role in the semiconductor industry. His patents continue to influence the future of memory technology.

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