The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2011
Filed:
Oct. 02, 2008
Ki-yeol Byun, Gyeonggi-do, KR;
Chan-kwang Park, Seoul, KR;
Jae-hwan Moon, Suwon-si, KR;
Tae-wan Lim, Suwon-si, KR;
Seung-ah Kim, Suwon-si, KR;
Ki-Yeol Byun, Gyeonggi-do, KR;
Chan-Kwang Park, Seoul, KR;
Jae-Hwan Moon, Suwon-si, KR;
Tae-Wan Lim, Suwon-si, KR;
Seung-Ah Kim, Suwon-si, KR;
Abstract
Provided are a semiconductor device and a method of forming the semiconductor device. The semiconductor device includes an active region of which an edge is curved. The semiconductor device includes a gate insulating layer, a floating gate, a gate interlayer dielectric layer and a control gate line on the active region. The semiconductor device includes an oxide pattern having a concave top surface between adjacent floating gates. The control gate may be sufficiently spaced apart from the active region by the oxide pattern. The method can provide a semiconductor device that includes a reoxidation process, an active region having a curved edge and an oxide pattern having a top surface of a curved concave shape.