Cheongju-si, South Korea

Tae Un Youn

USPTO Granted Patents = 5 

Average Co-Inventor Count = 1.6

ph-index = 1

Forward Citations = 8(Granted Patents)


Location History:

  • Chungcheongbuk-do, KR (2013)
  • Cheongju-si, KR (2014 - 2020)

Company Filing History:


Years Active: 2013-2025

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5 patents (USPTO):Explore Patents

Title: Tae Un Youn: Innovator in Semiconductor Memory Technology

Introduction

Tae Un Youn is a prominent inventor based in Cheongju-si, South Korea. He has made significant contributions to the field of semiconductor memory devices, holding a total of 5 patents. His innovative work focuses on enhancing the performance and classification of memory devices, which are crucial in modern electronics.

Latest Patents

Among his latest patents, Tae Un Youn has developed a method for measuring the refractive index of semiconductor memory devices. This method involves measuring the positive and negative breakdown voltages of memory cells connected to a selected word line. By analyzing these voltages, he can determine the refractive index of the charge storage layer in each memory cell. Additionally, he has patented a memory device and a method for operating it, which includes a memory block with multiple memory cells and a control logic system designed to manage erase operations effectively.

Career Highlights

Tae Un Youn is currently employed at SK Hynix Inc., a leading company in the semiconductor industry. His work at SK Hynix has positioned him as a key player in advancing memory technology. His patents reflect his commitment to innovation and his ability to solve complex challenges in semiconductor design and functionality.

Collaborations

Tae Un Youn has collaborated with notable colleagues, including Jong Wook Kim and Hye Lyoung Lee. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and expertise in semiconductor technology.

Conclusion

Tae Un Youn's contributions to semiconductor memory technology are noteworthy and impactful. His innovative patents and collaborative efforts continue to shape the future of memory devices, making him a significant figure in the field.

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