The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2013
Filed:
Mar. 18, 2009
Tae Un Youn, Chungcheongbuk-do, KR;
Tae Un Youn, Chungcheongbuk-do, KR;
SK hynix Inc., Icheon-Si, KR;
Abstract
The present invention discloses a method of fabricating a semiconductor memory device including forming sequentially a gate insulating layer and a first conductive pattern on a semiconductor substrate; forming a protective layer on surfaces of the first conductive pattern and the gate insulating layer; performing an etching process to form a trench, the etching process being performed such that the protective layer remains on side walls of the first conductive pattern to form a protective pattern; forming an isolation layer in the trench; etching the isolation layer; removing the protective pattern above a surface of the isolation layer; and forming sequentially a dielectric layer and a second conductive layer on surfaces of the isolation layer, the protective pattern and the first conductive pattern.