Company Filing History:
Years Active: 2020-2024
Title: Tae Hui Na: Innovator in Memory Device Technology
Introduction
Tae Hui Na is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of memory devices, holding a total of 7 patents. His work focuses on advancing the technology behind memory storage and retrieval systems.
Latest Patents
One of Tae Hui Na's latest patents is titled "Memory device and operating method thereof." This invention includes a memory cell array with multiple memory cells, each featuring a switch element and a data storage element that contains a phase change material. The memory controller in this device is designed to obtain first read voltages from the memory cells, input a first write current, and subsequently obtain second read voltages to determine the state of each memory cell.
Another notable patent is "Methods and apparatus for resistive memory device for sense margin compensation." This invention provides a resistive memory device that includes a resistive memory cell connected to a local word line node, along with transistors that facilitate connections to global word line nodes and sensing nodes. The device also features a margin compensation circuit to enhance performance.
Career Highlights
Tae Hui Na is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to push the boundaries of memory technology, contributing to the company's reputation for innovation.
Collaborations
Throughout his career, Tae Hui Na has collaborated with talented individuals such as Yong Jun Lee and Mu Hui Park. These collaborations have fostered a creative environment that has led to groundbreaking advancements in memory device technology.
Conclusion
Tae Hui Na is a distinguished inventor whose work in memory devices has made a significant impact on the technology landscape. His innovative patents and contributions to Samsung Electronics Co., Ltd. highlight his role as a key player in the advancement of memory technology.
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