The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 2024

Filed:

May. 07, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Tae Hui Na, Seoul, KR;

Mu Hui Park, Hwaseong-si, KR;

Kwang Jin Lee, Hwaseong-si, KR;

Yong Jun Lee, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
G11C 13/0004 (2013.01); G11C 13/004 (2013.01); H10N 70/231 (2023.02); G11C 2013/0057 (2013.01); G11C 2213/72 (2013.01); G11C 2213/76 (2013.01);
Abstract

A memory device includes a memory cell array including a plurality of memory cells, each of the plurality of memory cells having a switch element, and a data storage element connected to the switch element and containing a phis change material; and a memory controller for obtaining first read voltages from the plurality of memory cells, inputting a first write current to the plurality of memory cells, and then, obtaining second read voltages from the plurality of memory cells, wherein the memory controller compares the first read voltage of a first memory cell of the plurality of memory cells to the second read voltage of the first memory cell to determine a state of the first memory cell.


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