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For the Inventor, By the Inventor

Yokkaichi, Japan

Syo Fukata

USPTO Granted Patents = 9 

Average Co-Inventor Count = 4.1

ph-index = 4

Forward Citations = 58(Granted Patents)


Company Filing History:

goldMedal9 out of 4,573 
 
Sandisk Technologies Inc.
 patents

Years Active: 2014-2024

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9 patents (USPTO):Explore Patents
1. 11935784 - Three-dimensional memory device containing self-aligned bit line contacts and methods for forming the same (2024-03-19),
2. 11598005 - Deposition apparatus including an off-axis lift-and-rotation unit and methods for operating the same (2023-03-07),
3. 11551961 - Multi-zone plasma-enhanced chemical vapor deposition apparatus and methods for operating the same (2023-01-10),
4. 11538708 - Multi-zone plasma-enhanced chemical vapor deposition apparatus and methods for operating the same (2022-12-27),
5. 10847376 - In-situ deposition and etch process and apparatus for precision patterning of semiconductor devices (2020-11-24),
6. 9978768 - Method of making three-dimensional semiconductor memory device having laterally undulating memory films (2018-05-22),
7. 9305935 - Multi-level contact to a 3D memory array and method of making (2016-04-05),
8. 8994099 - Multi-level contact to a 3D memory array and method of making (2015-03-31),
9. 8828884 - Multi-level contact to a 3D memory array and method of making (2014-09-09),

Title: Syo Fukata: Innovator in Memory Device Technology

Introduction

Syo Fukata is a prominent inventor based in Yokkaichi, Japan. He has made significant contributions to the field of memory device technology, holding a total of 9 patents. His work focuses on innovative methods and devices that enhance the performance and efficiency of memory systems.

Latest Patents

Fukata's latest patents include a groundbreaking three-dimensional memory device that features self-aligned bit line contacts. This invention involves a vertical layer stack that includes a bit-line-level dielectric layer and an etch stop dielectric layer. Bit-line trenches are formed through this vertical layer stack, and fill structures are created within these trenches. Each fill structure consists of a stack of a bit line and a capping dielectric strip. Additionally, a bit-line-contact via cavity is formed, which includes a stepped bottom surface that integrates various components of the device.

Another notable patent involves a deposition apparatus that includes an off-axis lift-and-rotation unit. This apparatus is designed for use within a vacuum enclosure and features an electrostatic chuck, a gas supply manifold, and a pumping port. The innovative design allows for improved operation and efficiency in the deposition process.

Career Highlights

Fukata has established himself as a key figure in the technology sector, particularly through his work at Sandisk Technologies Inc. His inventions have not only advanced the field of memory devices but have also contributed to the overall progress of semiconductor technology.

Collaborations

Throughout his career, Syo Fukata has collaborated with notable colleagues, including Yusuke Osawa and Shigehiro Fujino. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Syo Fukata's contributions to memory device technology exemplify the spirit of innovation. His patents reflect a deep understanding of complex systems and a commitment to advancing technology. As he continues to develop new ideas, his impact on the industry is sure to grow.

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