This inventor holds 3 USPTO granted patents. Top assignees: The United States of America as Represented by the Department of Energy, The United States of America as Represented by the United States. Active years: 1991.
Company Filing History:
2 out of 1,211 
1 out of 3,975 
Years Active: 1991
Title: Innovations of Sylvia S. Tsao
Introduction
Sylvia S. Tsao is a prominent inventor based in Albuquerque, NM (US). She has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. Her work focuses on the development of advanced materials and methods for improving semiconductor devices.
Latest Patents
One of her latest patents is titled "Formation of multiple levels of porous silicon for buried insulators." This invention describes a method of forming a multiple level porous silicon substrate for semiconductor integrated circuits. It includes anodizing non-porous silicon layers of a multi-layer silicon substrate to create multiple levels of porous silicon. The process involves oxidizing at least one porous silicon layer to form an insulating layer, while another layer beneath it is metallized to create a buried conductive layer. The insulating and conductive layers are separated by an anodization barrier made of non-porous silicon. This innovative approach allows for the fabrication of fully or partially insulated buried conductors under single crystal silicon.
Another significant patent is the "Electrochemical method for defect delineation in silicon-on-insulator." This method provides a way to identify defects and metal contamination in thin-film silicon-on-insulator (SOI) or silicon-on-sapphire (SOS) wafers. By electrically connecting the surface of a silicon wafer and controlling the voltage within a specified range, the wafer is contacted with an electrolyte. After removing the electrolyte, defects can be identified, enhancing the quality control processes in semiconductor manufacturing.
Career Highlights
Throughout her career, Sylvia has worked with notable organizations, including the United States Department of Energy and the United States government. Her expertise in semiconductor technology has made her a valuable asset in these institutions.
Collaborations
Sylvia has collaborated with esteemed colleagues such as Michael J. Kelly and Terry R. Guilinger. Their combined efforts have contributed to advancements in semiconductor research and development.
Conclusion
Sylvia S. Tsao's innovative work in semiconductor technology has led to significant advancements in the field. Her patents reflect her commitment to improving the efficiency and effectiveness of semiconductor devices. Her contributions continue to influence the industry and inspire future innovations.