The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 1991
Filed:
Apr. 10, 1990
Applicant:
Inventors:
Terry R Guilinger, Albuquerque, NM (US);
Howland D Jones, Albuquerque, NM (US);
Michael J Kelly, Albuquerque, NM (US);
John W Medernach, Albuquerque, NM (US);
Joel O Stevenson, Albuquerque, NM (US);
Sylvia S Tsao, Albuquerque, NM (US);
Assignee:
United States Department of Energy, Washington, DC (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C25F / ; B23H / ;
U.S. Cl.
CPC ...
2041291 ; 2041293 ;
Abstract
An electrochemical method for defect delineation in thin-film SOI or SOS wafers in which a surface of a silicon wafer is electrically connected so as to control the voltage of the surface within a specified range, the silicon wafer is then contacted with an electrolyte, and, after removing the electrolyte, defects and metal contamination in the silicon wafer are identified.